12th Int'l Symposium on Quality Electronic Design
نویسندگان
چکیده
This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTNinduced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctuations that have power spectrum density of 1/ f 2 property, which clearly indicates the effect of RTNinduced delay fluctuations. From the comparison of the maximum frequency shifts obtained by measurements and simulations, the Vgs-dependency of RTN-induced ΔVth attenuates the RTN impact on delay around by half.
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12th Int'l Symposium on Quality Electronic Design
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